Part Number
|
TSM3401 |
Manufacturer
|
Taiwan Semiconductor Company |
Description
|
P-Channel Power MOSFET |
Published
|
Mar 5, 2010 |
Detailed Description
|
TSM3401
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -3A, 60mΩ
Features
● Advance Trench Process Technology ● Hig...
|
Datasheet
|
TSM3401
|
Overview
TSM3401
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -3A, 60mΩ
Features
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low Onresistance ● Pb-free plating ● RoHS compliant ● Halogen-free package
Application
● Load Switch ● PA Switch
SOT23
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V VGS = -4.
5V
-30 60 90
V mΩ
Qg 9.
52 nC
Notes: Moisture sensitivity level: level 3.
Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS -30
Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TA = 25°C
VGS ID IDM
±20 -3 -10
Continu...
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