Part Number
|
TSM3442 |
Manufacturer
|
Taiwan Semiconductor Company |
Description
|
20V N-CHANNEL MOSFET |
Published
|
Mar 5, 2010 |
Detailed Description
|
TSM3442
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 4A, 70mΩ
FEATURES
● Advance Trench Process Technology ● High ...
|
Datasheet
|
TSM3442
|
Overview
TSM3442
Taiwan Semiconductor
N-Channel Power MOSFET
20V, 4A, 70mΩ
FEATURES
● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
APPLICATION
● Load Switch ● PA Switch
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS 20 V
VGS = 4.
5V
70
RDS(on) (max)
VGS = 2.
5V
90
mΩ
Qg 5.
4 nC
SOT-26
Notes: Moisture sensitivity level: level 3.
Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
Total Power Dissipation @ TC = 25°C Operating Junction and Storage Temperature Range
...
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