TSM3460 Pin assignment: 1.
Drain 6.
Drain 2.
Drain 5, Drain 3.
Gate 4.
Source com 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.
5V, Ids @ 6A =22mΩ (typ.
) RDS (on), Vgs @ 2.
5V, Ids @ 5A =30mΩ (typ.
) Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs.
Battery switch application Block Diagram Ordering Information Part No.
TSM3460CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS ...

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