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Features
• Operating Voltage: 5V • Access Time: 30, 45 ns • Very Low Power Consumption • • • • • • • •
– Active: 600 mW (Max) – Standby: 1 µW (Typ) Wide Temperature Range: -55⋅C to +125⋅C 400 Mils Width Packages: FP32 and SB32 TTL Compatible Inputs and Outputs Asynchronous No Single Event Latch-up below a LET Threshold of 80 MeV/mg/cm2 Tested up to a Total Dose of 30 krads (Si) according to MIL STD 883 Method 1019 QML Q and V with SMD 5962-89598 ESCC with Specification 9301/047
Description
The M65608E is a very low power CMOS static RAM organized as 131072 x 8 bits.
Utilizing an array of six
transistors (6T) memory cells, the M65608E combines an extremely low standby su...