CYStech Electronics Corp.
High Voltage
PNP Epitaxial Planar
Transistor
www.
DataSheet4U.
com Spec.
No.
: C309A3-R
Issued Date : 2003.
10.
15
Revised Date : 2004.
04.
02 Page No.
: 1/4
BTA1759A3
Description
• High breakdown voltage.
(BVCEO=-400V) • Low saturation voltage, typical VCE(sat) = -0.
2V at Ic / IB = -20mA /-2mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505A3.
Symbol
BTA1759A3
Outline
TO-92
B：Base C：Collector E：Emitter
EBC
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7...