CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
com Spec.
No.
: C601E3-A Issued Date : 2004.
09.
16 Revised Date : Page No.
: 1/4
BTA1952E3
Features
• Low VCE(sat), VCE(sat)=-0.
5 V (typical), at IC / IB = -3A / -0.
15A • Excellent DC current gain characteristics • Wide SOA
Symbol
BTA1952E3
Outline
TO-220AB
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note : *1.
Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -1...