CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
www.
DataSheet4U.
com Spec.
No.
: C601I3 Issued Date : 2005.
10.
14 Revised Date : 2009.
02.
04 Page No.
: 1/ 5
BTA1952I3
Features
BVCEO IC RCESAT
-100V -5A 150mΩ
• Low VCE(sat), VCE(sat)=-0.
45 V (typical), at IC / IB = -3A / -0.
15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package
Symbol
BTA1952I3
Outline
TO-251
B：Base C：Collector E：Emitter
B B CCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1.
Single Pulse ...