CYStech Electronics Corp.
www.
DataSheet4U.
com Spec.
No.
: C811J3 Issued Date : 2008.
12.
10 Revised Date : 2009.
02.
04 Page No.
: 1/7
PNP Epitaxial Planar High Current (High Performance)
Transistor
BTB1216J3
Features
• 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A • RoHS compliant package
BVCEO IC RCE(SAT)
-140V -4A 90mΩ typ.
Symbol
BTB1216J3
Outline
TO-252
B：Base C：Collector E：Emitter
B
C
E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curr...