CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
com Spec.
No.
: C816M3-A Issued Date : 2003.
05.
26 Revised Date : 2005.
11.
28 Page No.
: 1/5
BTB1427M3
Features
• Low VCE(sat), VCE(sat)=-0.
6 V (typical), at IC / IB = -4A / -0.
1A • Excellent DC current gain characteristics
Symbol
BTB1427M3
Outline
SOT-89
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Pd Tj Tstg Limits -20 -15 -6 -5 -10 (Note 1) 0.
5 2 (Note 2) 150 -55~+150 Unit V V V A W °C °C
...