CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
com Spec.
No.
: C817I3-H Issued Date : 2003.
04.
02 Revised Date: 2009.
02.
04
Page:1/5
BTB772I3
Features
• Low VCE(sat),typically -0.
3 V at IC / IB = -2A / -0.
2A • Excellent current gain characteristics • Complementary to BTD882I3 • RoHS compliant package
BVCEO IC RCESAT
-30V -3A 150mΩ
Symbol
BTB772I3
Outline
TO-251
B：Base C：Collector E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1.
Single Pulse Pw≦350μs,Duty≦2%.
Symbol VCBO VCEO VEBO...