CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
Spec.
No.
: C208S3 com Issued Date : 2003.
06.
11 Revised Date : Page No.
: 1/4
BTC4102S3
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
• High breakdown voltage.
(BVCEO=120V) • Complementary to BTA1579S3
Symbol
BTC4102S3
Outline
SOT-323
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 120 120 5 50 200 150 -55~+150 Unit V V V mA mW °C °C
BTC41...