Part Number
|
MTB35N04J3 |
Manufacturer
|
Cystech Electonics |
Description
|
N -Channel Enhancement Mode Power MOSFET |
Published
|
Mar 9, 2010 |
Detailed Description
|
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
com Spec. No. : C453J3 Issued Date :...
|
Datasheet
|
MTB35N04J3
|
Overview
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
com Spec.
No.
: C453J3 Issued Date : 2009.
03.
11 Revised Date : Page No.
: 1/7
MTB35N04J3
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
BVDSS ID RDSON(MAX)
40V 12A 35mΩ
Equivalent Circuit
MTB35N04J3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L...
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