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ACE3413
Technology
Description
P-Channel Enhancement Mode MOSFET
The ACE3413 is the P-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
Features
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-20V/-3.
4A, RDS(ON)=95mΩ@VGS=-4.
5V -20V/-2.
4A, RDS(ON)=120mΩ@VGS=-2.
5V -20V/-1.
7A, RDS(ON)=145mΩ@VGS=-1...