FDMC7570S N-Channel Power Trench® SyncFETTM
com
December 2009
FDMC7570S
N-Channel Power Trench® SyncFETTM
25 V, 40 A, 2 mΩ Features General Description
The FDMC7570S has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
This device has the added benefit of an efficient monolithic
Schottky body diode.
Max rDS(on) = 2 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.
9 mΩ at VGS = 4.
5 V, ID = 21.
5 A Advanced Package and Combination for low rDS(on) and high efficiency SyncFET
Schottky Body Diode 100% UIL T...