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Part Number
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STP11NM60ND |
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Manufacturer
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STMicroelectronics |
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Description
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N-Channel Power MOSFET |
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Published
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Mar 18, 2010 |
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Detailed Description
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STP11NM60ND
Datasheet
N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a TO-220 package
Features
TAB
TO-2...
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Datasheet
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STP11NM60ND
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Overview
STP11NM60ND
Datasheet
N-channel 600 V, 370 mΩ typ.
, 10 A FDmesh II Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP11NM60ND
650 V
450 mΩ
10 A
• Fast-recovery body diode
• Low gate charge and input capacitance
•
Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness
Applications
• Switching applications
G(1)
Description
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
AM01475v1_noZen
MDmesh II technology.
Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance.
It is ideal for bridge
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