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ST13003D-K
High voltage fast-switching
NPN power
transistor
Features
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High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode
2 1
Applications
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3
SOT-32
Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications.
Figure 1.
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