com
STB/P432S
S a mHop Microelectronics C orp.
Ver 1.
0
N-Channel Logic Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
40V
FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
ID
60A
R DS(ON) (m Ω) Max
9 @ VGS=10V 11 @ VGS=4.
5V
D
G
S
G D S
S TB S E R IE S TO-263(DD-P AK)
S TP S E R IE S TO-220
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit 40 ±20 TC=25°C 60 240 130 TC=25°C 62.
5 -55 to 150
Units V V A A mJ W °C
-Pulsed Sigle Pulse...