Part Number
|
ATP106 |
Manufacturer
|
Sanyo Semicon Device |
Description
|
P-Channel Silicon MOSFET |
Published
|
Mar 20, 2010 |
Detailed Description
|
Ordering number : ENA1597
ATP106
com
SANYO Semiconductors
DATA SHEET
ATP106
Features
• • • • •
P-Ch...
|
Datasheet
|
ATP106
|
Overview
Ordering number : ENA1597
ATP106
com
SANYO Semiconductors
DATA SHEET
ATP106
Features
• • • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance.
Large current.
Slim package.
4.
5V drive.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --40 ±20 --30 --90 40 150 --55 to +150 30 --15 Unit V V A...
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