Ordering number : ENN8403
FW507
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MOSFET : P-Channel Silicon MOSFET SBD :
Schottky Barrier Diode
FW507
Features
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General-Purpose Switching Device Applications
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Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and a short reverse recovery time, low forward voltage
schottky barrier diode facilitating high-density mounting.
The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temp...