Part Number
|
IXTH6N120 |
Manufacturer
|
IXYS Corporation |
Description
|
High Voltage Power MOSFET |
Published
|
Mar 21, 2010 |
Detailed Description
|
www.DataSheet4U.com
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6...
|
Datasheet
|
IXTH6N120
|
Overview
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DataSheet4U.
com
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6N120 IXTT 6N120
VDSS ID25
RDS(on)
= 1200 V = 6A = 2.
6 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ± 20 ± 30 6 24 6 25 500 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C g g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G G = Gate S = Sourc...
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