Part Number
|
K6T1008V2C |
Manufacturer
|
Samsung semiconductor |
Description
|
128K x8 bit Low Power and Low Voltage CMOS Static RAM |
Published
|
Mar 25, 2010 |
Detailed Description
|
K6T1008V2C, K6T1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM www.DataSh...
|
Datasheet
|
K6T1008V2C
|
Overview
K6T1008V2C, K6T1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
History
0.
0 1.
0 Initial draft Finalize - Increased ISB, IDR Commercial part = 10µA Industrial part = 20 µA Revise - Change speed bin KM68V1000C Family: 70/85ns → 70/100ns KM68U1000C Family: 70/100ns → 85/100ns - Improved operating current: 40mA → 35mA - Improved power dissipation PD: 0.
7W → 1.
0W - Improved standby current Extended/Industrial: 20 → 10 µA - VIL: 0.
4V → 0.
6V
Draft Data
July 3, 1996 December 16, 1996
Remark
Preliminary Final
2.
0
November 25, 1997
Final
The attached datasheets are provided by SAMSUNG Electronics.
SA...
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