www.
DataSheet4U.
com
PMGD280UN
Dual N-channel µTrenchMOS™ ultra low level FET
MBD128
Rev.
01 — 10 February 2004
Product data
1.
Product profile
1.
1 Description
Dual N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Surface mounted package s Dual device s Low on-state resistance s Footprint 40% smaller than SOT23 s Fast switching s Low threshold voltage.
1.
3 Applications
s Driver circuits s Switching in portable appliances.
1.
4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 0.
41 W s ID ≤ 0.
87 A s RDSon ≤ 340 mΩ.
2.
Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description s...