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PMG370XN
N-channel µTrenchMOS™ extremely low level FET
MBD128
Rev.
01 — 13 February 2004
Product data
1.
Product profile
1.
1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
1.
3 Applications
s Driver circuits s Switching in portable appliances.
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4 Quick reference data
s VDS ≤ 30 V s Ptot ≤ 0.
69 W s ID ≤ 0.
96 A s RDSon ≤ 440 mΩ.
2.
Pinning information
Table 1: Pin 1 2 3 4 5 6 Pinning - SOT363 (SC-88), simplified outline and symbol Description drain (d) drain (d) gate (g) source (s)...