DATA SHEET
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NPN SILICON GERMANIUM RF
TRANSISTOR
NESG210833
NPN SiGe RF
TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
FEATURES
• The device is an ideal choice for low noise, low distortion amplification.
NF = 0.
7 dB TYP.
@ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.
9 dB TYP.
@ VCE = 5 V, IC = 30 mA, f = 1 GHz • PO (1 dB) = 18.
5 dBm TYP.
@ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz • OIP3 = 31 dBm TYP.
@ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz • Maximum stable power gain: MSG =16.
0 dB TYP.
@ VCE = 5 V, IC = 30 mA, f = 1 GHz • SiGe HBT technology (UHS2) : fT = 15.
5 GHz • 3-pin minimold (33 PKG)
ORDERING INFORMATION
Part Number NESG210833 ...