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Part Number
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APT11GP60K |
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Manufacturer
|
Advanced Power Technology |
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Description
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POWER MOS 7 IGBT |
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Published
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Mar 27, 2010 |
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Detailed Description
|
TYPICAL PERFORMANCE CURVES
APT11GP60K_SA APT11GP60K APT11GP60SA
com
600V
POWER MOS 7 IGBT
®
(K)
TO-2...
|
|
Datasheet
|
APT11GP60K
|
Overview
TYPICAL PERFORMANCE CURVES
APT11GP60K_SA APT11GP60K APT11GP60SA
com
600V
POWER MOS 7 IGBT
®
(K)
TO-220
(SA)
D2PAK
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
C G E
G
• Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
• SSOA rated
C
E
C G E
All Ratings: TC = 25°C unless otherwise speci...
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