BUK9Y11-30B
N-channel TrenchMOS logic level FET
Rev.
01 — 30 August 2007
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Product data sheet
1.
Product profile
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1 General description
N-channel enhancement mode power Field-Effect
Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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2 Features
I Very low on-state resistance I 175 °C rated I Q101 compliant I Logic level compatible
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3 Applications
I Automotive systems I Motors, lamps and solenoids I General purpose power switching I 12 V loads
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4 Quick reference data
I EDS(AL)S ≤ 112 mJ I ID ≤ 59 A I RDSon = 9.
3 mΩ (typ) I Ptot ≤ 75 W
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Pinning information
Table 1.
Pin 4 mb Pinning Description gate (G) mounting ...