Part Number
|
IXTK102N30P |
Manufacturer
|
IXYS Corporation |
Description
|
PolarHT Power MOSFET |
Published
|
Mar 30, 2010 |
Detailed Description
|
www.DataSheet4U.com
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 102N30P
VDSS = 300 V ID25 ...
|
Datasheet
|
IXTK102N30P
|
Overview
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DataSheet4U.
com
PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTK 102N30P
VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ
Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
Maximum Ratings 300 300 ±20 ±30 102 75 250 60 60 2.
5 10 700 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C
TO-264 (IXTK)
G
D
S
(TAB)
G = Gate S = Source
D =...
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