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IXTQ52N30P

Part Number IXTQ52N30P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Apr 2, 2010
Detailed Description PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25...
Datasheet IXTQ52N30P





Overview
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings 300 V 300 V  20 V  30 V 52 A 150 A 52 A 1 J 10 V/ns 400 W -55 .
.
.
+150 150 -55 .
.
.
+150 300 260  C  C  C °C °C 1.
13 / 10 4.
0 5.
5 Nm/lb.
in g g Symbol Test Conditions (...






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