Part Number
|
IXTQ52N30P |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
Apr 2, 2010 |
Detailed Description
|
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTT52N30P IXTQ52N30P
Symbol
VDSS VDGR
VGSS VGSM
ID25...
|
Datasheet
|
IXTQ52N30P
|
Overview
PolarTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated
IXTT52N30P IXTQ52N30P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P
Maximum Ratings
300
V
300
V
20
V
30
V
52
A
150
A
52
A
1
J
10
V/ns
400
W
-55 .
.
.
+150 150
-55 .
.
.
+150
300 260
C C C
°C °C
1.
13 / 10
4.
0 5.
5
Nm/lb.
in
g g
Symbol
Test Conditions
(...
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