Part Number
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HYB39S16800AT-8 |
Manufacturer
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Siemens Semiconductor |
Description
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16 MBit Synchronous DRAM |
Published
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Apr 10, 2010 |
Detailed Description
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com
16 MBit Synchronous DRAM (second generation)
Advanced Information • High Performance: CAS latency =...
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Datasheet
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HYB39S16800AT-8
|
Overview
com
16 MBit Synchronous DRAM (second generation)
Advanced Information • High Performance: CAS latency = 3 -8 125 8 7 -10 100 10 8 Units MHz ns ns
HYB 39S16400/800/160AT-8/-10
• Multiple Burst Read with Single Write Operation • Automatic and Controlled Precharge Command • Data Mask for Read/Write control (× 4, × 8) • Dual Data Mask for byte control (× 16) • Auto Refresh (CBR) and Self Refresh • Suspend Mode and Power Down Mode • 4096 refresh cycles/64 ms • Random Column Address every CLK (1-N Rule) • Single 3.
3 V ± 0.
3 V Power Supply • LVTTL Interface versions • Plastic Packages: P-TSOPII-44-1 400 mil width (× 4, × 8) P-TSOPII-50-1 400 mil width (× 16)
fCK tCK3 tAC3
• Sin...
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