Data Sheet
HAT2210R
Silicon N Channel Power MOSFET with
Schottky Barrier Diode High Speed Power Switching
R07DS1368EJ0301 Rev.
3.
01
Jan 20, 2017
Features
Low on-resistance Capable of 4.
5 V gate drive High density mounting Built-in
Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8FP-8DAV)
8765
78 DD
56 DD
1234
2
4
G
G
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S 1
MOS1
S 3
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation
Symbol VDSS VGSS ID
ID(pulse)Note1 IDR
Pch Note2
MOS1 30 ±20 7.
5 60...