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HAT2218R
Silicon N Channel Power MOS FET with
Schottky Barrier Diode High Speed Power Switching
REJ03G0396-0300 Rev.
3.
00 Aug.
23.
2004
Features
• • • • Low on-resistance Capable of 4.
5 V gate drive High density mounting Built-in
Schottky Barrier Diode
Outline
SOP-8
7 8 D1 D1 5 6 S1/D2 S1/D2 8 2 G1 4 G2 5 7 6
3 1 2
4
S1/D2(kelvin) 1
S2 3
MOS1
MOS2 and
Schottky Barrier Diode
Absolute Maximum Ratings
(Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Symbol VDSS VGSS ID ID(pulse)Note1 IDR MOS1 30 ±20 7.
5 60 7.
5 MOS2 & SBD 30 ±12 8.
0 64 8.
0 Unit V V A A A W
Channel dissipation Pch Note2 1.
5 1...