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DataSheet4U.
com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns TO-264 AA TO-264 AA (IXFK) Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 200 200 200 V 200 ±20 ±30 90  76 360 50 30 5 500 200 ±20 ±30 100 400 50 30 5 520 150 -55 .
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+150 200 V 20 V 20 V 106 A A 424 A A 30 mJ 5 V/ns W °C °C °C °C V~ V~ VDSS VDGR VGS VGSM ID25 ID80 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 80°C, lim...

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