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com M36W0R6030T0 M36W0R6030B0 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 8 Mbit SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.
7 to 1.
95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration): 8810h – Device Code (Bottom Flash Configuration): 8811h ■ PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY ■ PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program optio...

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