Part Number
|
JDV2S26FS |
Manufacturer
|
Toshiba Semiconductor |
Description
|
VCO Diode |
Published
|
Apr 16, 2010 |
Detailed Description
|
JDV2S26FS
TOSHIBA Diode Silicon Epitaxial Planar Type
com
JDV2S26FS
VCO for UHF Band Radio
• • • High c...
|
Datasheet
|
JDV2S26FS
|
Overview
JDV2S26FS
TOSHIBA Diode Silicon Epitaxial Planar Type
com
JDV2S26FS
VCO for UHF Band Radio
• • • High capacitance ratio: C1V/C4V =2.
9 (typ.
) Low series resistance: rs = 0.
4 Ω (typ.
) This device is suitable for use in small tuners.
カソードマーク
Unit: mm
0.
6±0.
05 0.
1 0.
8±0.
05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
0.
07
M
0.
1
A
0.
2 ±0.
05
0.
1±0.
05
0.
48 +0.
02 -0.
03
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decreas...
Similar Datasheet