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Part Number
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IS41LV4100 |
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Manufacturer
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Integrated Silicon Solution |
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Description
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1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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Published
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Apr 17, 2010 |
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Detailed Description
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IS41C4100 IS41LV4100
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs • Ref...
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Datasheet
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IS41LV4100
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Overview
IS41C4100 IS41LV4100
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout • Single power supply 5V ± 10% (IS41C4100) 3.
3V ± 10% (IS41LV4100) • Industrail Temperature Range -40oC to 85oC
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ISSI
®
PRELIMINARY INFORMATION SEPTEMBER 2001
DESCRIPTION
The ISSI IS41C4100 and IS41LV4100 are 1,048,576 x 4-bit high-performance CMOS Dynamic Random Access Memory.
Both products offer accelerated cycle access EDO Page Mode.
EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns...
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