PH16030L
N-channel TrenchMOS™ logic level FET
Rev.
01 — 24 February 2005
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Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Logic level threshold s SO8 equivalent area footprint s Low thermal resistance s Low gate charge.
1.
3 Applications
s DC-to-DC converters s Portable appliances.
1.
4 Quick reference data
s VDS ≤ 30 V s RDSon ≤ 16.
9 mΩ s ID ≤ 38 A s Qgd = 2.
9 nC (typ).
2.
Pinning information
Table 1: Pin 1, 2, 3 4 mb Pinning Description source gate mounting base; connected to drain
mb
D
Simplified outline
Symbol
G
mbb07...