Part Number
|
IXFK26N60Q |
Manufacturer
|
IXYS |
Description
|
HiPerFET Power MOSFET |
Published
|
Apr 20, 2010 |
Detailed Description
|
Advance Technical Information
com
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche...
|
Datasheet
|
IXFK26N60Q
|
Overview
Advance Technical Information
com
HiPerFETTM Power MOSFETs
Q-Class
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg
IXFK 26N60Q IXFX 26N60Q
VDSS ID25 RDS(on)
= 600 V = 26 A = 0.
25 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 26 104 26 45 1.
5 5 360 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C
PLUS 247TM (IXFX)
D (TA...
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