Part Number
|
IXGT32N170 |
Manufacturer
|
IXYS |
Description
|
High Voltage IGBT |
Published
|
Apr 21, 2010 |
Detailed Description
|
com
High Voltage IGBT
Preliminary Data Sheet
IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ)
= 17...
|
Datasheet
|
IXGT32N170
|
Overview
com
High Voltage IGBT
Preliminary Data Sheet
IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ)
= 1700 V = 75 A = 3.
3 V = 250 ns
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.
8 VCES 350 -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
W °C °C °C °C °C
z z
G = Gate, E = Emitter,
Features
z
Maximum Lead ...
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