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IXGT32N170

Part Number IXGT32N170
Manufacturer IXYS
Description High Voltage IGBT
Published Apr 21, 2010
Detailed Description com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 17...
Datasheet IXGT32N170




Overview
com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.
3 V = 250 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.
8 VCES 350 -55 .
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+150 150 -55 .
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+150 300 260 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) G C (TAB) C E C = Collector, TAB = Collector W °C °C °C °C °C z z G = Gate, E = Emitter, Features z Maximum Lead ...






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