Part Number
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IS41C16100S |
Manufacturer
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Integrated Silicon Solution |
Description
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1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
Published
|
Apr 22, 2010 |
Detailed Description
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IS41C16100S IS41LV16100S
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode a...
|
Datasheet
|
IS41C16100S
|
Overview
IS41C16100S IS41LV16100S
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16100S) 3.
3V ± 10% (IS41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C
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DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle ...
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