2PB1424
20 V, 3 A
PNP low VCEsat (BISS)
transistor
Rev.
02 — 15 January 2007
Product data sheet
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Product profile
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1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS)
transistor in a medium power SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
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2 Features
I Low collector-emitter saturation voltage VCEsat I High collector current capability IC and ICM I High collector current gain (hFE) at high IC I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional
transistors
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3 Applications
I DC-to-DC conversion I MOSFET gate driving I Motor control I Charging ...