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IXTR200N10P

Part Number IXTR200N10P
Manufacturer IXYS
Description Power MOSFET
Published Apr 23, 2010
Detailed Description Advanced Technical Information www.DataSheet4U.com PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10...
Datasheet IXTR200N10P





Overview
Advanced Technical Information www.
DataSheet4U.
com PolarTM HiPerFET Power MOSFET Electrically Isolated Tab IXTR 200N10P VDSS ID25 RDS(on) = 100 V = 133 A = 8 mΩ N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 100 100 ± 20 ± 30 V V V V A A A A mJ J V/ns W °C °C °C V~ Nm/lb g z z ISOPLUS 247TM E153432 TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C 133 75 400 60 100 4 ...






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