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K1S64161CC
Document Title
4Mx16 bit Page Mode Uni-
Transistor Random Access Memory
UtRAM
Revision History
Revision No.
History
0.
0 Initial Draft - Design Target Revised - Filled out ICC2 and ISB1 value ICC2(max) : 40mA ISB1(max, 40°C) : 120µA ISB1(max, 85°C) : 180µA - Changed tOH from min.
5ns into min.
3ns - Added tCSHP(CS High Pulse Width) as min.
10ns - Added tWHP(WE High Pulse Width) as min.
5ns Finalize - Added Lead Free Product
Draft Date
April 12, 2004
Remark
Advanced
0.
1
November 3, 2004
Preliminary
1.
0
April 06, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to change the specificat...