PMWD26UN
Rev.
02 — 19 May 2005
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Dual N-channel µTrenchMOS ultra low level FET
Product data sheet
1.
Product profile
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1 General description
Dual N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology.
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2 Features
s Surface-mounted package s Very low threshold voltage s Low profile s Fast switching
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3 Applications
s Portable appliances s Battery management s PCMCIA cards s Load switching
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4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 3.
1 W s ID ≤ 7.
8 A s RDSon ≤ 30 mΩ
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Pinning information
Table 1: Pin 1 2, 3 4 5 6, 7 8 Pinning Description drain1 (D1) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2) drain2 (D2)
1 4
S1...