IXFN 58N50 IXFN 61N50 Preliminary Data Sheet com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhancement Mode IXFN 58N50 500V IXFN 61N50 500V Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.
0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 .
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+150 150 -40 .
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+150 V V V V A A A A W °C °C °C V~ V~ Features • International standard package • Isolation voltage 3000V (RMS) • Low R DS (on) HDMOSTM processl • Rugged polysilicon gate cell structure • Low drain-to-c...

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