Part Number
|
IXFN58N50 |
Manufacturer
|
IXYS |
Description
|
High Current Power MOSFET |
Published
|
Apr 27, 2010 |
Detailed Description
|
IXFN 58N50 IXFN 61N50
Preliminary Data Sheet com
VDSS
ID25 58A 61A
RDS(on) 85 mΩ 75 mΩ
High Current ...
|
Datasheet
|
IXFN58N50
|
Overview
IXFN 58N50 IXFN 61N50
Preliminary Data Sheet com
VDSS
ID25 58A 61A
RDS(on) 85 mΩ 75 mΩ
High Current Power MOSFET
N-Channel Enhancement Mode
IXFN 58N50 500V IXFN 61N50 500V
Symbol VDSS VDGR V GS V GSM I D25 I DM PD TJ TJM Tstg VISOL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.
0 MΩ Continuous Transient TC = 25°C TC = 25°C (1) TC = 25°C IXFN IXFN IXFN IXFN
Maximum Ratings 500 500 ±20 ±30 58N50 61N50 58N50 61N50 58 61 232 244 625 -40 .
.
.
+150 150 -40 .
.
.
+150 V V V V A A A A W °C °C °C V~ V~ Features • International standard package • Isolation voltage 3000V (RMS) • Low R DS (on) HDMOSTM processl • Rugged polysilicon gate cell structure • Low drain-to-c...
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