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TM ®
LX5516
InGaP HBT 2.
4 - 2.
5 GHz Power Amplifier Module
P RODUCTION D AT A S HEET W WW .
Microsemi .
CO M
DESCRIPTION The LX5516 is a power amplifier module optimized for WLAN applications in the 2.
4-2.
5GHz frequency range.
The PAM is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with on-chip active bias and 50 Ω impedance matched at both input and output.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process (MOCVD).
With single low voltage supply of 3.
3V, it delivers 29dB power gain between 2.
4-2.
5GHz, at a low quiescent current of 80mA.
For 18dBm OFDM output power (64QAM, 54Mbps), the PAM prov...