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ME4946
Dual N-Channel 60-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4946 is the Dual N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦41mΩ@VGS=10V ● RDS(ON)≦52mΩ@VGS=4.
5V ● Super high density cell design for extremely low RDS(ON...