|
Part Number
|
BH616UV1611 |
|
Manufacturer
|
Brilliance Semiconductor |
|
Description
|
Ultra Low Power/High Speed CMOS SRAM |
|
Published
|
May 3, 2010 |
|
Detailed Description
|
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
Pb-Free and Green package materials are compliant to RoHS
...
|
|
Datasheet
|
BH616UV1611
|
Overview
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
Pb-Free and Green package materials are compliant to RoHS
www.
DataSheet4U.
com BH616UV1611
n FEATURES
Ÿ Wide VCC low operation voltage : 1.
65V ~ 3.
6V Ÿ Ultra low power consumption : VCC = 3.
6V Operation current : 10mA (Max.
) at 55ns 2mA (Max.
) at 1MHz Standby current : 5.
0uA (Typ.
) at 3.
0V/25OC VCC = 1.
2V Data retention current : 1.
5uA(Typ.
) at 25OC Ÿ High speed access time : -55 55ns (Max.
) at VCC=1.
65~3.
6V -70 70ns (Max.
) at VCC=1.
65~3.
6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ Three state outputs and TTL compatible Ÿ ...
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