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ME4542
N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542 is the N- and P-Channel logic enhancement mode power field effect
transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● 30V/6.
9A,RDS(ON)=25mΩ@VGS=10V (N-Ch) ● 30V/5.
8A,RDS(ON)=40mΩ@VGS=4.
5V (N-Ch) ● -30V/-6.
1A,RDS(O...