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SEMIX302GB12E4S

Part Number SEMIX302GB12E4S
Manufacturer Semikron International
Description IGBT
Published May 13, 2010
Detailed Description SEMiX302GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX302GB12E4s Features • Homogeneous Si • Trench = Trenchgate technolog...
Datasheet SEMIX302GB12E4S





Overview
SEMiX302GB12E4s SEMiX® 2s Trench IGBT Modules SEMiX302GB12E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 0,5  RGoff,main = 0,5  RG,X = 2,2  RE,X = 0,5  Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM ICRM = 3xICnom VGES tpsc Tj VCC = 800...






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