Part Number
|
SEMIX302GB12E4S |
Manufacturer
|
Semikron International |
Description
|
IGBT |
Published
|
May 13, 2010 |
Detailed Description
|
SEMiX302GB12E4s
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB12E4s
Features
• Homogeneous Si • Trench = Trenchgate technolog...
|
Datasheet
|
SEMIX302GB12E4S
|
Overview
SEMiX302GB12E4s
SEMiX® 2s
Trench IGBT Modules
SEMiX302GB12E4s
Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognized, file no.
E63532
Typical Applications*
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C
• Dynamic values apply to the following combination of resistors: RGon,main = 0,5 RGoff,main = 0,5 RG,X = 2,2 RE,X = 0,5
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800...
Similar Datasheet
- SEMIX302GB12E4S IGBT - Semikron International